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One of the procedures used in making monolithic integrated circuits which overcomes this problem is photolithography based on photoresists. However, in recent years electron beam lithography based on electron resists has been used as an alternative method for cases in which resolution is desired. The lithographic process involves coating of the substrate, e.g.silicon dioxide, with resist and its exposure to light through a mask( image boundaries). Images can be produced by solvent development followed by etching and stripping of the resist. Resists must be capable of forming uniform pinhole-free films on a substrate by a simple process such as spinning, dip-coating or spraying, be of a high degree of purity, i.e. contain only low levels of ions to achieve no electrical properties, be easily removed by solvent dissolution, be thermally stable up to 150 centigrade to withstand the burn-in temperatures used for hybrid circuits, cause no stress on fine-wire bonds and no deleterious effects on active devices and be compatible with the devices and wire bonds of high density circuits.